°øÁ¤ Á¾¸»Á¡ °ËÃâ
Leak detection
Plasma °øÁ¤ ¸ð´ÏÅ͸µ
Portable ±¤ °ËÃâ ¹× ¸ð´ÏÅ͸µ
 
Semiconductor/LCD/OLED
- Dry Etcher(Metal, Oxide, Poly-Si)
- CVD, Dry Cleaning Process
- Photoresist Strip
 
 
Wavelength Range 200~850nm(order)
Resolution < 1.0nm FWHM @546.1nm
Grating 600grooves/mm Ruled Type
Slit Size 10§­
Integration Time >25msec
Number of Pixels 2048Pixels
 
Software windows 2000/XP
Interface USB 1.1/2/0
Size 155(W)X100(L)X60(H)(mm)
 
 
ÀÚü Çö󽺸¶ ±¤¿ø Çü¼º ¹ß±¤ ¹× ºñ¹ß±¤ °øÁ¤¿¡ Àû¿ë
High sensitivity
- ppb ¼öÁØÀÇ °ËÃâ ÇѰè : Tl, Cu, Al, Si, N2, O2 µî
- F, Cl µî¿¡ ´ëÇÑ °í°¨µµ ¸ð´ÏÅ͸µ
- ¹ÝµµÃ¼ °øÁ¤ÀÇ ÁÖ¿ä Gas ÃøÁ¤ : TiF, TiCl, SiF, N, OH, CNµî
Optical window ÁõÂø ¹®Á¦ °³¼±
- window ÁõÂø °³¼±À» À§ÇÑ ±¸Á¶ ÀåÂø
- ¼¾¼­ heating °¡´É
 

Source RF Power 13.56M§Ô
Maxlmum RF Power
300W
Chamber Material
Quartz or Alumina
Size 95(W)*122(L)*112(H)(mm)
 
Semiconductor/LCD/OLED
- Dry Etcher(Metal, Oxide, Poly-Si)
- CVD, Dry Cleaning Process : Cleaning end-point detection, Leak detection
- Photoresist Strip
 
Power Requirements 220VAC¡¾5%
Software windows 2000/XP
Interface USB 1.1/2/0
Cooling Fan or Water
Connection NW25